This paper presents an ultrawideband low-noise amplifier chip using TSMC 0.18 Ã?µm CMOS technology. We propose a UWB low\nnoise amplifier (LNA) for low-voltage and low-power application.The present UWB LNA leads to a better performance in terms\nof isolation, chip size, and power consumption for low supply voltage. This UWB LNA is designed based on a current-reused\ntopology, and a simplified RLC circuit is used to achieve the input broadband matching. Output impedance introduces the LC\nmatching method to reduce power consumption. The measured results of the proposed LNA show an average power gain (S21) of\n9 dB with the 3 dB band from 3 to 5.6GHz. The input reflection coefficient (S11) less than -9dB is from 3 to 11GHz. The output\nreflection coefficient (S22) less than -8 dB is from 3 to 7.5GHz. The noise figure 4.6ââ?¬â??5.3 dB is from 3 to 5.6GHz. Input third-orderintercept\npoint (IIP3) of 2 dBm is at 5.3GHz. The dc power consumption of this LNA is 9mW under the supply of a 1V supply\nvoltage. The chip size of the CMOS UWB LNA is 1.03 Ã?â?? 0.78mm2 in total.
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